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SSP70N10A
Advanced Power MOSFET
Description
Advanced Power
MOSFET
FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 100V Lower RDS(ON) : 0.018 Ω (Typ.) SSP70N10A BVDSS = 100 V RDS(on) = 0.023 Ω ID = 55 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratin...
Fairchild Semiconductor
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SSP70N10A
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