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SN7000 SIPMOS Small-Signal Transistor Datasheet

Features at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 60 1.4 0.1 1 2 3 2 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 5 µA VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 10 nA Ω 5 5.3 VGS = 20 V, VDS = 0 V Drain-Source on-state resistance RDS(on) VGS = 10 V, ID = 0.5 A VGS = 4.5 V, ID = 0.075 A Semiconductor Group 2 12/05/1997 SN 7000 Electric.

Datasheet SN7000 Siemens Semiconductor Group SN7000
SN 7000 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 D .


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