Features |
at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
60 1.4 0.1 1 2 3 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 5
µA
VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
10
nA Ω 5 5.3
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.5 A VGS = 4.5 V, ID = 0.075 A
Semiconductor Group
2
12/05/1997
SN 7000
Electric.
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Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
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Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor |
|
|
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Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
|
|
|
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
|
|
|
AUK |
Voltage and Current Controller |
|
|
|
AUK |
Voltage and Current Controller |
|
|
|
AUK |
Dual Operational Amplifier and Voltage Reference |
|
|
|
AUK |
Dual Operational Amplifier and Voltage Reference |
|
|
|
KODENSHI KOREA |
Constant voltage and constant current controller |
|
|
|
Si-En |
Multi Function I/O Driver |
|
|
|
Texas Instruments |
Quadruple 2-Input Positive-NAND Gates |
|
|
|
Texas Instruments |
Quadruple 2-Input Positive-NAND Gates |
|
|
|
Texas Instruments |
Quadruple 2-Input Positive-NAND Gates |
|