N-Channel MOSFET
Description
MOSFET
N-Channel Enhancement Mode Field Effect Transistor
SI2300
Features
◆ VDS=20V,RDS(ON)=40mΩ@VGS=4.5V,ID=5.0A ◆ VDS=20V,RDS(ON)=60mΩ@VGS=2.5V,ID=4.0A ◆ VDS=20V,RDS(ON)=75mΩ@VGS=1.8V,ID=1.0A
Absolute Maximum Ratings Ta=25℃
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Current -Continuous* TJ=125℃
-Pulsed Power Dissipation* Thermal Resistance,...
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