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S8550LT1
HIGH VOLTAGE TRANSISTOR
Description
S8550LT1 HIGH
VOLTAGE
TRANSISTOR: (PNP) FEATURES Die Size 0.44*0.44mm Power dissipation PCM : 225mW （Tamb=25℃） Collector current ICM : 0.5A Collector-base
voltage
V(BR)CBO : 40V PNP EPITAXIAL SILICON TRANSISTORS SOT—23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified） Parameter Collector-base breakdown volt...
Wing Shing Computer Components
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