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QM3203S Datasheet (PDF)

Features z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available Product Summery BVDSS -30V RDSON 25mΩ ID -6.5A Applications z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA z Networking DC-DC Power System z Load Switch SOP8 Pin Configuration D1 D1 D2 D2 Absolute Maximum Ratings S1 G1S2 G2 Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, -VGS @ -10V1 Continuous Drain Current, -VGS.

Datasheet QM3203S UBIQ QM3203S
The QM3203S is the highest performance trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSO.


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