Search by part number and manufacturer or description
| Features |
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent Cdv/dt effect decline z Green Device Available
Product Summery
BVDSS -20V
RDSON 240mΩ
ID -1A
Applications
z High Frequency Point-of-Load Synchronous s Small power switching for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
SOT363 (SC-70-6L ) Pin Configuration
Absolute Maximum Ratings
Symbol VDS VGS
ID@TA=25℃ ID@TA=70℃
IDM PD@TA=25℃
TSTG TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 T.
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QM2517C1 UBIQ
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| No. | Part # | Manufacture | Description | Datasheet |
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UBIQ |
Dual N-Ch 20V Fast Switching MOSFETs |
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UBIQ |
Dual N-Ch 20V Fast Switching MOSFETs |
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UBIQ |
Dual N-Ch 20V Fast Switching MOSFETs |
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UBIQ |
Dual N-Ch 20V Fast Switching MOSFETs |
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UBIQ |
Dual N-Ch 20V Fast Switching MOSFETs |
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UBIQ |
Dual N-Ch 20V Fast Switching MOSFETs |
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UBIQ |
Dual P-Ch 20V Fast Switching MOSFETs |
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UBIQ |
Dual N-Ch 20V Fast Switching MOSFETs |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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Mitsubishi Electric Semiconductor |
HIGH POWER SWITCHING USE INSULATED TYPE |
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