NDP7060 Datasheet (PDF). Stock, Price


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NDP7060 N-Channel Enhancement Mode Field Effect Transistor Datasheet

Features 75A, 60V. RDS(ON) = 0.013Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage T C = 25°C unless otherwise .

Datasheet NDP7060 Fairchild NDP7060
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell de.


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