Features |
75A, 60V. RDS(ON) = 0.013Ω @ VGS=10V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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D
G
S
Absolute Maximum Ratings
Symbol VDSS VDGR VGSS ID Parameter Drain-Source Voltage
T C = 25°C unless otherwise .
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No. | Part # | Manufacture | Description | Datasheet |
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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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|
Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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