| Features |
12 and 11A, 80V. RDS(ON) = 0.16 and 0.20Ω. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design (3 million/in²) for extremely low RDS(ON). TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
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D
G
S
Absolute Maximum Ratings
Symbol Parameter VDSS VDGR VGSS ID PD TJ,TSTG TL Drain-Source Voltage Drain-.
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NDP408AE Fairchild
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild |
N-Channel Enhancement Mode Field Effect Transistor |
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