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| Features |
3.8 A, 30 V. RDS(ON) = 0.033 Ω @ VGS = 10 V RDS(ON) = 0.05 Ω @ VGS = 4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance and maximum DC current capability.
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5 6 7 8
4 3 2 1
Absolute Maximum Ratings T A = 25°C unless otherwise note
Symbol VDSS VGSS ID PD TJ,TSTG RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulse.
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NDH8503N Fairchild
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Fairchild |
Dual P-Channel MOSFET |
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Fairchild |
Dual P-Channel MOSFET |
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Fairchild |
Dual N&P-Channel MOSFET |
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Fairchild |
Dual N&P-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
P-Channel MOSFET |
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Fairchild |
Dual N-Channel MOSFET |
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Fairchild |
Dual N-Channel MOSFET |
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Fairchild |
Dual P-Channel MOSFET |
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Fairchild |
Dual P-Channel MOSFET |
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Fairchild |
N-Channel MOSFET |
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Fairchild |
Dual N&P-Channel MOSFET |
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