N-Channel Enhancement Mode Power MOSFET
Description
Pb Free Product
http://www.ncepower.com
NCE55H12
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE55H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURES
● VDS =55V,ID =120A RDS(ON) < 5.5mΩ @ VGS=10V (Typ:4.1mΩ) ● High density cell...
NCE Power Semiconductor
NCE55H12 PDF File
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