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| Features |
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • Insulating package, front/back side insulating voltage=2500V(AC) • RoHS compliant package Symbol MTN18N20FP Outline TO-220FP G：Gate D：Drain S：Source MTN18N20FP GDS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C840FP Issued Date : 2012.03.30 Revised Date : Page No. : 2/ 10 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) Sin. |
MTN18N20FP CYStech
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CYStech |
N-Channel Enhancement Mode Power MOSFET |
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CYStech |
N-Channel Enhancement Mode MOSFET |
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CYStech |
N-Channel Enhancement Mode MOSFET |
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CYStech |
N-Channel Enhancement Mode Power MOSFET |
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CYStech |
N-Channel Enhancement Mode Power MOSFET |
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CYStech |
N-Channel Enhancement Mode Power MOSFET |
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CYStech |
N-Channel Enhancement Mode Power MOSFET |
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CYStech |
N-Channel Enhancement Mode Power MOSFET |
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CYStech |
N-Channel Enhancement Mode Power MOSFET |
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CYStech |
N-Channel Enhancement Mode Power MOSFET |
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CYStech |
N-Channel Enhancement Mode Power MOSFET |
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CYStech |
N-Channel Enhancement Mode Power MOSFET |
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