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MTB6N60E1

ON Semiconductor

High Energy Power FET


Description
MTB6N60E1 TMOS E−FET.™ High Energy Power FET D2PAK−SL Straight Lead N−Channel Enhancement−Mode Silicon Gate http://onsemi.com This advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high spe...



ON Semiconductor

MTB6N60E1

PDF File MTB6N60E1 PDF File


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