Dual N-Channel Enhancement Mode Power MOSFET
Description
CYStech Electronics Corp.
Spec. No. : C708H8 Issued Date : 2016.05.23 Revised Date : 2016.11.07 Page No. : 1/ 10
Dual N-Channel Enhancement Mode Power MOSFET
MTB60A06DH8 BVDSS ID@VGS=10V, TC=25°C
ID@VGS=10V, TC=100°C
ID@VGS=10V, TA=25°C
Features
Low On Resistance
ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=5A
Simple Drive Requirement
RDS(ON)@VGS=4.5...
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