RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Description
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MRF951
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Features
Fully Implanted Base and Emitter Structure. High Gain, Gain at Optimum Noise Figure = 14 dB @ 1 GHz Low Noise Figure – 1.3dB @ 1GHz Ftau - 8.0 GHz @ 6v, 30mA Cost Effective Ma...
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