L & S BAND GaAs FET
Description
MITSUBISHI SEMICONDUCTOR
MGF0916A
L & S BAND GaAs FET [ SMD non - matched ]
DESCRIPTION
The MGF0916A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers.
FEATURES
High output power Po=23dBm(TYP.) @f=1.9GHz,Pin=5dBm High power gain Gp=19dB(TYP.) @f=1.9GHz High power added efficiency ηadd=30%(TYP.) @f=1.9GHz,Pin=...
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