High-power GaAs FET
Description
< High-power GaAs FET (small signal gain stage) >
MGF0906B
L & S BAND / 5W non - matched
DESCRIPTION
The MGF0906B, GaAs FET with an N-channel schottky gate, is designed for L & S band applications.
FEATURES
Class A operation
High output power
P1dB=37.0dBm(T.Y.P) @f=2.3GHz
High power gain
GLP=11.0dB(TYP.) @f=2.3GHz
High power added efficiency
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