IGBT Module Silicon N Channel IGBT
Description
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MG300Q2YS65H
TOSHIBA IGBT Module Silicon N Channel IGBT
MG300Q2YS65H
High Power & High Speed Switching Applications
· · · High input impedance Enhancement-mode The electrodes are isolated from case. Unit: mm
Equivalent Circuit
E1 E2
C1
E2
G1 E1/C2
G2
JEDEC JEITA TOSHIBA
― ― 2-109C4A
Maximum Ratings (Ta = 25°C)
Characteristics Co...
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