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MEM2309 Datasheet (PDF)

Features w.datasheet4u.com/ MEM2309 Thermal Characteristics: Parameter Thermal Resistance, Junction-to-Ambient 3 Symbol RθJA Ratings 50 Unit ! /W Electrical Characteristics: MEM2309SG Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Current Source-drain (diode forward) voltage Symbol Test Condition Static Characteristics VGS=0V, V(BR)DSS ID=-250uA VDS= VGS, VGS(th) ID=-250uA VDS=0Vÿ VGS=20V IGSS VDS=0Vÿ VGS=-20V VDS=-24V IDSS VGS=0V RDS(ON)1 VGS=.



Datasheet MEM2309 MicrOne MEM2309
MEM2309SGSeries P-channel enhancement mode field-effect transistor ,produced with high cell density DMOS trench technol.


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