(MBR20045CT - MBR200100CTR) Schottky Power Diode
Description
Naina Semiconductor Ltd.
Features
Guard Ring Protection Low forward voltage drop High surge current capability Up to 100V VRRM
MBR20045CT thru MBR200100CTR
Silicon Schottky Diode, 200A
TWIN TOWER PACKAGE
Maximum Ratings (TJ = 25oC unless otherwise specified) Parameter Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Average...
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