2SK3502-01MR
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power ...
2SK3502-01MR
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER
MOSFET200303
N-CHANNEL SILICON POWER
MOSFET
Outline Drawings [mm]
TO-220F
Applications
Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Ratings Unit V 600 A ±12 A ±48 V ±30 A 12 mJ 183 kV/µs 20 kV/µs 5 2.16 W 70 Operating and storage Tch +150 °C -55 to +150 temperature range Tstg °C Isolation
Voltage VISO *5 2 kVrms *1 L=2.33mH, Vcc=60V, See to Avalanche Energy Graph *2 Tch < 150°C = *3 IF < = BVDSS, Tch < = 150°C *4 VDS < = 600V *5 t=60sec, f=60Hz = -ID, -di/dt=50A/µs, Vcc < Item Drain-source
voltage Continuous drain current Pulsed drain current Gate-source
voltage Repetitive or non-repetitive Maximum Avalanche Energy Maximum Drain-Source dV/dt Peak Diode Recovery dV/dt Max. power dissipation Symbol V DS ID ID(puls] VGS IAR *2 EAS *1 dVDS/dt *4 dV/dt *3 PD Ta=25°C Tc=25°C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown
voltaget Gate threshold
voltage Zero gate
voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge www.Da...
