N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.165Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRIPTION · Ultra low gate charge · High peak current capability
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
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