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| Features |
• Single 5.0 V supply : 5.0 V ± 10 % • Access time 10/12/15 ns (max) • Completely static memory No clock or timing strobe required • Equal access and cycle times • Directly TTL compatible All inputs and outputs • Operating current : 200/180/160 mA (max) • TTL standby current : 70/60/50 mA (max) • CMOS standby ccurrent : 5 mA (max) : 1.2 mA (max) (L-version) • Data retension current : 0.8 mA (max) (L-version) • Data retension voltage : 2.0 V (min) (L-version) • Center VCC and VSS type pinout HM624100H Series Ordering Information Type No. HM624100HJP-10 HM624100HJP-12 HM624100HJP-15 HM62410. |
HM624100H Hitachi Semiconductor
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Hitachi Semiconductor |
4M High Speed SRAM (1-Mword x 4-bit) |
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Hitachi Semiconductor |
262144-word x 4-bit High Speed CMOS Static RAM |
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H&M semi |
High Input Voltage LDO Linear Regulators |
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H&M semi |
ultra sensitive hall effect switch |
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Hitachi |
256K High Speed SRAM |
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Hitachi |
4 Bit CMOS Static RAM |
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Hitachi Semiconductor |
High Speed CMOS Static RAM |
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Hitachi |
1048576 word / 1 Bit High Speed CMOS Static RAM |
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Hitachi Semiconductor |
4M High Speed SRAM (4-Mword x 1-bit) |
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Hitachi Semiconductor |
4M High Speed SRAM (4-Mword x 1-bit) |
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H&M Semiconductor |
Fast Transient Response LDO |
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H&M semi |
positive voltage regulators |
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