N-Channel MOSFET
Description
HFP12N65U
HFP12N65U
650V N-Channel MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.67 ȍ7\S#9GS=10V 100% Avalanche Tested
July...
Similar Datasheet