Silicon N-Channel Power MOSFET
Description
HAT2201R
Silicon N Channel Power MOS FET Power Switching
Features
Capable of 8 V gate drive Low drive current High density mounting Low on-resistance
RDS(on) = 34 mΩ typ. (at VGS = 10 V)
Outline
SOP-8
8 7 65
56 7 8 DD D D
1 234
4 G
SSS 12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
REJ03G0233-0301Z Rev.3.01
Nov.30.2016
Rev.3.01, Nov.30.2016,...
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