Silicon N-Channel IGBT
Description
GT10Q301
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT10Q301
High Power Switching Applications Motor Control Applications
Unit: mm
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The 3rd generation Enhancement-mode High speed: tf = 0.32 µs (max) Low saturation voltage: VCE (sat) = 2.7 V (max) FRD included between emitter and collector
Maximum Ratings (Ta = 25°C)
Charact...
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