| Features |
General Description
Max rDS(on) = 46mΩ at VGS = -4.5V, ID = -4.9A Max rDS(on) = 69mΩ at VGS = -2.5V, ID = -4.0A Low gate charge (11nC typical). High performance trench technology for extremely low rDS(on). HBM ESD protection level >3kV (Note 3). RoHS Compliant
These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for portable electronics applications: lo.
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FDS9933BZ Fairchild Semiconductor
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Fairchild Semiconductor |
Dual P-Channel 2.5V Specified PowerTrench MOSFET |
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Fairchild Semiconductor |
Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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Fairchild Semiconductor |
MOSFET |
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Fairchild Semiconductor |
Dual N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild Semiconductor |
Dual N-Channel MOSFET |
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Fairchild Semiconductor |
60V N-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
Dual 30V P-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
Dual P-Channel MOSFET |
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Fairchild Semiconductor |
Dual P-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
30V P-Channel PowerTrench MOSFET |
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Fairchild Semiconductor |
Single N-Channel Enhancement Mode Field Effect Transistor |
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Fairchild Semiconductor |
P-Channel 2.5V Specified MOSFET |
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