200V N-Channel MOSFET
Description
FDP2614 — N-Channel PowerTrench® MOSFET
October 2013
FDP2614
N-Channel PowerTrench® MOSFET
200 V, 62 A, 27 mΩ
Features
RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A Fast Switching Speed Low Gate Charge High Performance Trench technology for Extremely Low
RDS(on) High Power and Current Handing Capability
RoHS Compliant
General Description
T...
Fairchild Semiconductor
FDP2614 PDF File
Similar Datasheet