MOSFET
Description
FDMD85100 Dual N-Channel PowerTrench® MOSFET
September 2015
FDMD85100
Dual N-Channel PowerTrench® MOSFET
Q1: 100 V, 48A, 9.9 mΩ Q2: 100 V, 48A, 9.9 mΩ
Features
General Description
Q1: N-Channel Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A Max rDS(on) = 16.4 mΩ at VGS = 6 V, ID = 8 A Q2: N-Channel
Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A...
Similar Datasheet