Power MOSFET
Description
E 50N06
HEXFET® Power MOSFET
Dynamic dv/dt Rating 175 ْC Operating Temperature Fast switching Ease of Paralleling Simple Drive Requirements
VDSS = 60V ID25 = 50A RDS(ON) = 0.022
Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and...
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