| Features |
aturation Voltage
Cob Output Capacitance
fT Current Gain Bandwidth Product
tON Turn On Time
tSTG
Storage Time
tF Fall Time
* Pulse Test: Pulse Width£300ms, Duty Cycle£2% IC = 10mA, IB = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 5A VCE = 5V, IC = 8A IC = 5A, IB = 1A IC = 8A, IB = 1.6A IC = 12A, IB = 3A IC = 5A, IB = 1A IC = 8A, IB = 1.6A VCB = 10V , f = 0.1MHz VCE = 10V, IC = 0.5A VCC =125V, IC = 8A IB1 = - IB2 = 1.6A RL = 15,6W Min. 400 8 6 4 Typ. 180 Max. 1 40 30 1 1.5 3 1.2 1.6 1.1 3 0.7 Units V mA V V V V V pF MHz ms ms ms © 2007 Fairchild Semiconductor Corporation KSE13009L Rev. 1.0.0. |
E13009L ETC
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
CSF |
Triode |
|
|
|
|
DEC |
POWER TRANSISTOR |
|
|
|
|
DEC |
POWER TRANSISTOR |
|
|
|
|
Daesan Electronics |
POWER TRANSISTOR |
|
|
|
|
Daesan Electronics |
POWER TRANSISTOR |
|
|
|
|
Fairchild Semiconductor |
KSE13005 |
|
|
|
|
Thinki Semiconductor |
(MJE13005 Series) Silicon NPN Power Transistor |
|
|
|
|
Jingdao |
Bipolar Junction Transistor |
|
|
|
|
Fairchild Semiconductor |
NPN Silicon Transistor |
|
|
|
|
ON Semiconductor |
NPN Bipolar Power Transistor |
|
|
|
|
Fairchild Semiconductor |
NPN Silicon Transistor |
|
|
|
|
San Pu |
High Voltage Power Transistor |
|