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C5043 Datasheet (PDF)

Features
· High speed (tf=100ns typ).
· High reliability (HVP process).
· High breakdown voltage (VCBO=1600V).
· Adoption of MBIT process.
· On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5043] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C 5.45 5.45 1 : Base 2 : Col.



Datasheet C5043 Sanyo Semicon Device C5043
Ordering number:EN4781 NPN Triple Diffused Planar Silicon Transistor 2SC5043 Ultrahigh-Definition CRT Display Horizont.


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