Features |
· High speed (tf=100ns typ). · High reliability (HVP process). · High breakdown voltage (VCBO=1600V). · Adoption of MBIT process. · On-chip damper diode. Package Dimensions unit:mm 2039D [2SC5043] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C 5.45 5.45 1 : Base 2 : Col. |
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No. | Part # | Manufacture | Description | Datasheet |
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Siemens |
8-Bit CMOS Microcontroller |
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Infineon |
Generating sinusoidal 3-PhaseCurrents |
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Toshiba Semiconductor |
2SC504 |
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Sanyo |
2SC5041 |
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Sanyo |
2SC5042 |
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Sanyo |
2SC5044 |
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Sanyo |
2SC5045 |
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Sanyo Semicon Device |
2SC5046 |
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Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor |
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Toshiba Semiconductor |
2SC5048 |
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Toshiba Semiconductor |
2SC5000 |
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International |
Low Skew Muliple Frequency PCI Clock Generator with EMI Reducing SSCG |
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