logo

C5020 Datasheet (PDF)

Features
 Diffused Junction
 Low Leakage
 Low Cost
 High Surge Current Capability
 Die Size 220 mil HEX C5020, C5024, C5036 50A AVALANCHE AUTOMOTIVE CELL DIODE Pb D Anode + C E Mechanical Data B C50
 Case: Cell Diode Passivated with Silicon Rubber
 Terminal: Copper Disc with Ag Plated
 Polarity: Indicated by Large Disc On Cathode Dim Min Max A — 7.55 B — 6.55 Side, Add “R” Suffix to Indicate Reverse Polarity, C 0.75 — i.e. C5020R
 Mounting Position: Any
 Lead Free: For RoHS / Lead Free Version, D 1.0 — A E — 2.2 All Dimensions in mm Add “-LF” Suffix to Part Number, See Page 2 Maxi.



Datasheet C5020 Won-Top Electronics C5020
® WON-TOP ELECTRONICS Features  Diffused Junction  Low Leakage  Low Cost  High Surge Current Capability  Die Size 2.


Distributor Stock Price Buy





Similar Product

No. Part # Manufacture Description Datasheet
1
C502

Siemens
8-Bit CMOS Microcontroller
Datasheet
2
C502

Moxa
PCI Dual Port Sync Board Manual
Datasheet
3
C5021CT-036

NEC
UPC5021
Datasheet
4
C5022

Hitachi Semiconductor
2SC5022
Datasheet
5
C5023

Hitachi
2SC5023
Datasheet
6
C5023CS

NEC
UPC5023
Datasheet
7
C5024

Won-Top Electronics
50A AVALANCHE AUTOMOTIVE CELL DIODE
Datasheet
8
C5024

Hitachi Semiconductor
Silicon NPN Epitaxial
Datasheet
9
C5026

Panasonic Semiconductor
2SC5026
Datasheet
10
C5027

Fairchild Semiconductor
KSC5027
Datasheet
11
C5027

Toshiba Semiconductor
2SC5027
Datasheet
12
C5027

Unisonic Technologies
2SC5027
Datasheet





Since 2014 :: D4U Semiconductor :: (Privacy Policy & Contact)