Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 350V(Min.) ·Collector Saturation Voltage-
: VCE(sat)= 1.0V(Max.)@ IC= 3A ·High Speed Switching ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in color TV receiver’s chopper supply.
ABSOLUTE MAXIM...
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