NPN Transistor
Description
isc Silicon NPN Power Transistor
BDX36
DESCRIPTION ·High Current Capability-IC= 5A(DC) ·DC Current Gain—
: hFE = 45-450(Min) @ IC= 0.5 A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min.) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High-current switching in power applications.
ABSOLUTE MAXIMUM...
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