Build in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier
Description
BB503M
Build in Biasing Circuit MOS FET IC UHF RF Amplifier
ADE-208-811B(Z) 3rd. Edition Jul. 1999 Features
Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.8 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=...
