Search by part number and manufacturer or description
| Features |
ent
3
Value Max. 90
Unit ℃/W
Data and specifications subject to change without notice
200509032
AP2306N
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 20 0.5 -
Typ. 0.1 13 8.7 1.5 3.6 6 14 18.4 2.8 603 144 111
Max. Units 27 32 50 90 1 10 ±100 V V/℃ mΩ mΩ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=5.5A VGS=4.5V, ID=5.3A VGS=2.5V, ID=2.6A V.
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AP2306N Advanced Power Electronics
AP2306N VBsemi
AP2306N
AP2306N N-Channel 20 V (D-S) MOSFET
www.VBsemi.com
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.028 at VGS = 4.5 .
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