Dual P-Channel Enhancement Mode Field Effect Transistor
Description
ACE4953B
Dual P-Channel Enhancement Mode Field Effect Transistor
Description The ACE4953B uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge. This device is suitable for use as a load switch or in PWM applications.
Features
VDS(V)=-20V ID=-5.5A (VGS=-10V) RDS(ON)<55mΩ (VGS=-10V) RDS(ON)<58mΩ (VGS=-4.5V) RDS...
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