Silicon NPN Power Transistor
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:VCEO= 60V(Min) ·DC Current Gain-
: hFE= 30(Min)@ (VCE= 5V, IC= 1A) ·High Collector Current ·High Collector Power Dissipation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·TV Horizontal Deflection Output Application
ABSOLU...
Inchange Semiconductor
2SC2233 PDF File
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