2N2222 NPN Silicon Transistor datasheet, Distributor, Stock and Best Price

2N2222 NPN Silicon Transistor

Features

at VCB = 50 V at VCB = 60 V Collector Base Breakdown Voltage at IC = 10 µA Collector Emitter Breakdown Voltage at IC = 10 mA Emitter Base Breakdown Voltage at IE = 10 µA Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA Gain Bandwidth Product at IC = 20 mA, VCE = 20 V, f = 100 MHz Collector Output Capacitance at VCB = 10 V, f = 1 MHz Symbol hFE hFE hFE hFE 2N2222 hFE 2N2222A hFE 2N2222 ICBO 2N2222A 2N2222 V(BR)CBO 2N2222A 2N2222 V(BR)CEO 2N2222A 2N22

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