Silicon Diode
Description
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS306
High Voltage, High Speed Switching Applications
1SS306
Unit: mm
Small package
: SC-61
Low forward voltage
: VF (2) = 0.90 V (typ.)
Fast reverse recovery time : trr = 30 ns (typ.)
Small total capacitance : CT = 1.5 pF (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
...
Toshiba Semiconductor
1SS306 PDF File
Similar Datasheet
