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1N5407

EIC

SILICON RECTIFIER DIODES

1N5400 - 1N5408 PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capabil...


EIC

1N5407

File Download Download 1N5407 Datasheet


Description
1N5400 - 1N5408 PRV : 50 - 1000 Volts Io : 3.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Pb / RoHS Free MECHANICAL DATA : * Case : DO-201AD Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.929 grams SILICON RECTIFIER DIODES DO - 201AD 0.21 (5.33) 0.19 (4.83) 0.052 (1.32) 0.048 (1.22) 1.00 (25.4) MIN. 0.375 (9.53) 0.285 (7.24) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. RATING Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375"(9.5mm) Lead Length Ta = 75 °C Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on rated load (JEDEC Method) Maximum Forward Voltage at IF = 3.0 Amps. Maximum DC Reverse Current Ta = 25 °C at rated DC Blocking Voltage Ta = 100 °C Typical Junction Capacitance (Note1) Typical Thermal Resistance (Note2) Junction Temperature Range Storage Temperature Range SYMBOL 1N5400 1N5401 1N5402 1N5404 1N5406 1N5407 1N5408 UNIT VRRM VRMS VDC 50 100 200 400 600 800 1000 V 35...




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