1N4759A Glass Passivated Junction Silicon Zener Diodes

1N4759A Glass Passivated Junction Silicon Zener Diodes

1N4740A – 1M200Z Taiwan Semiconductor 1W, 10V - 200V Zener Diode FEATURES ● AEC-Q101 qualified available ● Glass passivated chip junction ● Low profile package ● Built-in strain relief ● Low inductance ● Typical IR less than 5μA above 11V ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21.

Features

● AEC-Q101 qualified available
● Glass passivated chip junction
● Low profile package
● Built-in strain relief
● Low inductance
● Typical IR less than 5μA above 11V
● RoHS Compliant
● Halogen-free according to IEC 61249-2-21 APPLICATIONS
● For general purpose regulation and protection applications KEY PARAMETERS PARAMETER VALUE UNIT VZ 10 - 200 V Test current IZT 1.2 - 25 mA Ptot 1 W TJ MAX 150 °C Package DO-204AL (DO-41) Configuration Single die MECHANICAL DATA
● Case: DO-204AL (DO-41)
● Molding compound meets UL 94V-0 flammability rating
● Terminal: Pure tin plated leads, .