CGHV31500F GaN HEMT

CGHV31500F GaN HEMT

RES, 511, OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 6.8pF, +/-0.25%, 250V, 0603 CAP, 10.0pF, +/-1%, 250V, 0805 CAP, 10.0pF, +/-5%, 250V, 0603 CAP, 470pF, 5%, 100V, 0603, X CAP, 33000 pF, 0805, 100V, X7R CAP, 10uF 16V TANTALUM CAP, 1.0uF, 100V, 10%, X7R, 1210 CAP, 33uF, 20%, G .

Features

• 2.7 - 3.1 GHz Operation
• 675 W Typical Output Power
• 13.3 dB Power Gain
• 66% Typical Drain Efficiency
• 50 Ohm Internally Matched
• <0.3 dB Pulsed Amplitude Droop Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Pulse Width PW 500 Duty Cycle DC 10 Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS TSTG TJ IGMAX IDMAX TS τ 125 -10, +2 -65, +150 225 80 24 245 40 P.