CGHV27060MP |
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| Part Number | CGHV27060MP |
| Manufacturer | Cree |
| Description | CGHV27060MP 60 W, DC - 2700 MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications Cree’s CGHV27060MP is a 60W gallium nitride (GaN) high electron mobility transistor (HEMT) housed in a small plastic SMT package 4.4mm x 6.5mm. The transistor is a broadband device with no internal input or output ... |
| Features |
- WCDMA
• 2.5 - 2.7 GHz Reference Design Amplifier • 18 dB Gain at 14 W PAVE • -35 dBc ACLR at 14 W PAVE • 33% Efficiency at 14 W PAVE • High Degree of DPD Correction Can be Applied Features - Pulsed • 16.5 dB Gain at Pulsed PSAT • 70% Efficiency at Pulsed PSAT • 85 W at Pulsed PSAT Rev 2.0 – April 2019 Subject to change without notice. www.cree.com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Drain-Source Voltage VDSS Gate-to-Source Voltage VGS Storage Temperature TSTG Operating Junction Temperature TJ Maximum Forward Gate ... |
| Datasheet |
 CGHV27060MP Data Sheet
PDF 915.00KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Cree |
GaN HEMT |
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CREE |
GaN HEMT |
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Cree |
GaN HEMT |
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Cree |
GaN HEMT |
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Cree |
GaN HEMT |
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Cree |
GaN HEMT |
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Cree |
GaN HEMT |
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Cree |
GaN HEMT |
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Cree |
GaN HEMT |
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Wolfspeed |
GaN HEMT |
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Cree |
GaN HEMT |
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Wolfspeed |
800W GaN Transistor |
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