V40DL45BP Trench MOS Barrier Schottky Rectifier

V40DL45BP Trench MOS Barrier Schottky Rectifier

www.vishay.com V40DL45BP Vishay General Semiconductor TMBS® (Trench MOS Barrier Schottky) Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.26 V at IF = 5 A eSMP® Series SMPD (TO-263AC) K 1 2 Top View Bottom View FEATURES • Trench MOS Schottky technology • Very low profile - typic.

Features

• Trench MOS Schottky technology
• Very low profile - typical height of 1.7 mm
• Ideal for automated placement
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Anode 1 Anode 2 K Cathode DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 40 A (TA = 125 °C) TOP max. (AC model) TJ max. (DC forward current) Package 40 A 45 V 240 A 0.53 V 150 °C 200 °C SMPD (TO-263AC) .