KTC4376 EPITAXIAL PLANAR NPN TRANSISTOR

KTC4376 EPITAXIAL PLANAR NPN TRANSISTOR

J BP E SEMICONDUCTOR TECHNICAL DATA HIGH CURRENT APPLICATION. FEATURES ᴌ1W (Mounted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTA1664. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current.

Features

ᴌ1W (Mounted on Ceramic Substrate). ᴌSmall Flat Package. ᴌComplementary to KTA1664. MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature VCBO VCEO VEBO IC IB PC PC* Tj 35 30 5 800 160 500 1 150 Storage Temperature Range Tstg -55ᴕ150 PC* : KTC4376 mounted on ceramic substrate (250mm2x0.8t) UNIT V V V mA mA mW W ᴱ ᴱ KTC4376 EPITAXIAL PLANAR NPN TRANSISTOR AC H G DD K FF 1 23 DIM A B C D E F G H J K MILLIMETERS 4.70 MAX 2.50 +_0.20 1..