ACE2302M N-Channel MOSFET

ACE2302M N-Channel MOSFET

ACE2302M uses advanced trench technology to provide excellent RDS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power management, DC/DC converter. Features • Low rDS(on) trench technology • Low thermal impedance • F.

Features

• Low rDS(on) trench technology
• Low thermal impedance
• Fast switching speed Applications
• White LED boost converters
• Automotive Systems
• Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current a Pulse Drain Current b TA=25℃ TA=70℃ Continuous Source Current (Diode Conduction) a Power Dissipation a TA=25℃ TA=70℃ Operating Temperature / Storage Temperature *1 Pw ≦10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.062 inch glass epoxy board% Symbol VDS VGS ID IDM IS PD TJ/TSTG Limit 20 ±8 3.4 .