HFP2N90 N-Channel MOSFET

HFP2N90 N-Channel MOSFET

HFP2N90 Feb 2014 HFP2N90 900V N-Channel MOSFET BVDSS = 900 V RDS(on) typ ȍ ID = 2.2 A FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 1.

Features

‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 17 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7S#9GS=10V ‰ 100% Avalanche Tested TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current Drain Current
  – Continuous (TC = 25ఁ͚͑
  – Continuous (TC = 100ఁ͚͑
  – Pulsed (Note 1).