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HFP12N60U HFP12N60U 600V N-Channel MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lower RD.
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 42 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 0.53 ȍ 7S #9GS=10V 100% Avalanche Tested
July 2014
BVDSS = 600 V RDS(on) typ = 0.53 ȍ ID = 12 A
TO-220
1 23
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC .
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
| 1 | HFP12N60S |
SemiHow |
N-Channel MOSFET |
|
| 2 | HFP12N65S |
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N-Channel MOSFET |
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| 3 | HFP12N65U |
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N-Channel MOSFET |
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| 4 | HFP10N60 |
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| 5 | HFP10N60S |
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| 6 | HFP10N60U |
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| 7 | HFP10N65S |
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| 8 | HFP10N65U |
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| 9 | HFP10N80 |
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| 10 | HFP11N40 |
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| 11 | HFP11N80Z |
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800V N-Channel MOSFET |
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| 12 | HFP13N10 |
HUASHAN ELECTRONIC |
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| 13 | HFP13N50 |
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| 14 | HFP13N50S |
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N-Channel MOSFET |
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| 15 | HFP13N50U |
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N-Channel MOSFET |
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