BU806 Datasheet

BU806 MEDIUM Voltage & Fast Switching Darlington Transistor

The devices are silicon Epitaxial Planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. They can be used in horizontal output stages of 110 oCRT video displays. Absolute Maximum Ratings ( Ta = 25℃ ) Parameter l Val.

Features

CE=400V, VBEO=0 IEBO VEB=6V, IC=0 VCEO IC=100mA, IB=0 hFE(1) VCE=5V, IC=5.0A VCE(sat) IC=5.0A,IB=50mA VBE(sat) IC=5.0A,IB=50mA VF IF=4.0A TS IC=5A, IB=0.5A Min. — — 200 200 — — — — Typ. — — — — — — — 0.55 Max. Unit 100 uA 3.5 mA —V — 1.5 V 2.4 V 2V — us .